Copyright © 2009 Bin Wu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
We consider the drift-diffusion model with avalanche generation for evolution
in time of electron and hole densities , coupled with the electrostatic potential in a semiconductor device. We also assume that the diffusion term is degenerate. The existence of local weak solutions to this Dirichlet-Neumann mixed boundary value problem is obtained.