Mathematical Problems in Engineering
Volume 2009 (2009), Article ID 716104, 12 pages
Research Article

Macro- and Microsimulations for a Sublimation Growth of SiC Single Crystals

1Humboldt University of Berlin, Unter den Linden 6, 10099 Berlin, Germany
2Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan

Received 3 September 2008; Revised 2 November 2008; Accepted 18 November 2008

Academic Editor: José Roberto Castilho Piqueira

Copyright © 2009 Jürgen Geiser and Stephan Irle. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The numerous technical applications in electronic and optoelectronic devices, such as lasers, diodes, and sensors, demand high-quality silicon carbide (SiC) bulk single crystal for industrial applications. We consider an SiC crystal growth process by physical vapor transport (PVT), called modified Lely method. We deal with a model for the micro- and macroscales of the sublimation processes within the growth apparatus. The macroscopic model is based on the heat equation with heat sources due to induction heating and nonlocal interface conditions, representing the heat transfer by radiation. The microscopic model is based on the quantum interatomic potential and is computed with molecular dynamics. We study the temperature evolution in the apparatus and reflect the growth behavior of the microscopic model. We present results of some numerical simulations of the micro- and macromodels of our growth apparatus.