Advances in Mathematical Physics
Volume 2010 (2010), Article ID 494738, 13 pages
Review Article

From Random Telegraph to Gaussian Stochastic Noises: Decoherence and Spectral Diffusion in a Semiconductor Quantum Dot

1Laboratoire Pierre Aigrain, Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 5, France
2CNRS UMR8551, Universités Pierre et Marie Curie, 24 rue Lhomond, 75005 Paris, France
3Laboratoire de Physico-Chimie des Matériaux Luminescents, Université Lyon 1, Université de Lyon, Campus de la Doua, 69622 Villeurbanne, France
4Université Montpellier 2, CC 074, 34095 Montpellier Cedex 5, France

Received 21 September 2009; Accepted 29 December 2009

Academic Editor: Shao-Ming Fei

Copyright © 2010 A. Berthelot et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We present a general theoretical description of the extrinsic dephasing mechanism of spectral diffusion that dominates the decoherence dynamics in semiconductor quantum dots at low temperature. We discuss the limits of random telegraph and Gaussian stochastic noises and show that the combination of both approaches in the framework of the pre-Gaussian noise theory allows a quantitative interpretation of high-resolution experiments in single semiconductor quantum dots. We emphasize the generality and the versatility of our model where the inclusion of asymmetric jump processes appears as an essential extension for the understanding of semiconductor quantum dot physics.